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The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors

Received: 13 October 2016     Published: 13 October 2016
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Abstract

Zn diffusion in III-V compound semiconductors are commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically under group III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except In As. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.

Published in International Journal of Materials Science and Applications (Volume 5, Issue 5)
DOI 10.11648/j.ijmsa.20160505.18
Page(s) 228-234
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2016. Published by Science Publishing Group

Keywords

Zn Diffusion, Self-Diffusion, III-V Compound Semiconductors

References
[1] S. Reynolds, D. W. Vook, and J. F. Gibbons, “Open-tube Zn diffusion in GaAs using diethylzinc and trimethylarsenic: Experiment and model,” J. Appl. Phys., vol. 63, pp. 1052-1059, 1988.
[2] O. V. Sulima, A. W. Bett, M. G. Mauk, B. Y. Ber, and P. S. Dutta, “Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP. In: Fifth Conference of Thermophotovoltaic Generation of Electricity,”pp. 402-413, 2003.
[3] O. V. Sulima, and A. W. Bett, “Fabrication and simulation of GaSb thermophotovoltaic cells,” Sol. Energy Mat. Sol. Cells, vol. 66, pp. 533-540, 2001.
[4] V. Khvostikov, S. Sorokina, O. Khvostikova, N. K. Timoshina, N. Potapovich, B. Y. Ber, D. Y. Kazantsev, and V. Andreev, “High-efficiency GaSb photocells,” Semiconductors, vol. 47, pp. 307-313, 2013.
[5] V. Khvostikov, O. Khostikov, E. Oliva, V. Rumyantsev, M. Shvarts, T. Tabarov, and V. Andreev, "Zinc-diffused InAsSbP/InAs and Ge TPV cells.", Photovoltaic Specialists Conference pp. 943-946, 2002.
[6] E. V. Kunitsyna, I. Andreev, V. Sherstnev, T. L’vova, M. Mikhailova, Y. P. Yakovlev, G. Kaynak, and O. Gurler, “Narrow gap III–V materials for infrared photodiodes and thermophotovoltaic cells,” Opt. Mater., vol. 32, pp. 1573-1577, 2010.
[7] B. Tuck, “Atomic Diffusion in III-V Semiconductors”, Hilger, Bristol, pp78-80, 1988.
[8] K. B. Kahen, “Model for the diffusion of zinc in gallium arsenide,” Appl. Phys. Lett., vol. 55, pp. 2117-2119, 1989.
[9] K. B. Kahen, J. P. Spence and G. Rajeswaran, “Mechanism for zinc diffusion in n‐type gallium arsenide,” J. Appl. Phys., vol. 70, pp. 2464-2466,1991.
[10] C. Domke, P. Ebert, M. Heinrich, and K. Urban, “Microscopic identification of the compensation mechanisms in Si-doped GaAs,” Phy. Rev. B, vol. 54, pp. 10288-10291, 1996.
[11] N. H. Ky, L. Pavesi, D. Araujo, J. Ganiere, and F. Reinhart, “A model for the Zn diffusion in GaAs by a photoluminescence study,” J. Appl. Phys., vol. 69, pp. 7585-7593, 1991.
[12] M. Hudait, P. Modak, K. Rao, and S. Krupanidhi, “Low temperature photoluminescence properties of Zn-doped GaAs,” Mat. Sci. Eng. B, vol. 57, no. 1, pp. 62-70, 1998.
[13] M. I. Nathan, G. Burns, S. E. Blum, and J. C. Marinace, “Electroluminescence and Photoluminescence of GaAs at 77° K,” Phy. Rev., vol. 132, pp. 1482, 1963.
[14] V. S. Sundaram, and P. E. Gruenbaum, “Zinc diffusion in GaSb,” J. Appl. Phys., vol. 73, pp. 3787-3789, 1993.
[15] G. Rajagopalan, N. S. Reddy, H. Ehsani, I. B. Bhat, P. S. Dutta, R. J. Gutmann, G. Nichols, and O. Sulima, “A simple single-step diffusion and emitter etching process for high-efficiency GaSb thermophotovoltaic devices,” J. Electron. Mater., vol. 32, no. 11, pp. 1317-1321, 2003.
[16] A. W. Bett, S. Keser, and O. V. Sulima, “Study of Zn diffusion into GaSb from the vapour and liquid phase,” J. Cryst. Growth, vol. 181, no. 1-2, pp. 9-16, 1997.
[17] L. Tang, H. Ye and J. Xu, “A novel zinc diffusion process for the fabrication of high-performance GaSb thermophotovoltaic cells,” Sol. Energy Mat. Sol. Cells, vol. 122, pp. 94-98, 2014.
[18] L. Tang, L. M. Farrs, Z. Liu, C. Xu and X. Chen, “Performance improvement of the GaSb thermophotovoltaic cells with n-type emitters,” IEEE. Electr. Device, vol. 62, no. 9, 2015.
[19] H. Ye, L. Tang, and K. Li, “The intrinsic relationship between the kink-and-tail and box-shaped zinc diffusion profiles in n-GaSb,” Semicond. Sci. Tech, vol. 28, pp. 015001, 2013.
[20] V. Andreev, V. Khvostikov, O. Khvostikova, N. Kaluzhniy, E. Oliva, V. Rumyantsev, S. Titkov, and M. Shvarts, "Low-bandgap PV and thermophotovoltaic cells." Proceedings of 3rd World Conference on IEEE, pp. 15-18, 2003.
[21] A. Krier, M. Yin, A. R. J. Marshall, et al., “Low Bandgap InAs-Based Thermophotovoltaic Cells for Heat-Electricity Conversion,” J. Electr. Mat., vol. 45(6), pp. 2826-2830, 2016.
[22] A. Krier, M. Yin, A. R. J. Marshall, et al., “Low bandgap mid-infrared thermophotovoltaic arrays based on InAs,” Infrared Phys. Techn., vol. 73, pp. 126-129, 2015.
[23] H. Y. Deng, Q. W. Wang, J. C. T, et al., “Electrical property of infrared-sensitive InAs solar cell,” Chin. Phys. Lett., vol. 27, no. 11, 116206 (pp. 1-5), 2010.
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  • APA Style

    Liangliang Tang, Chang Xu, Zhuming Liu. (2016). The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors. International Journal of Materials Science and Applications, 5(5), 228-234. https://doi.org/10.11648/j.ijmsa.20160505.18

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    ACS Style

    Liangliang Tang; Chang Xu; Zhuming Liu. The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors. Int. J. Mater. Sci. Appl. 2016, 5(5), 228-234. doi: 10.11648/j.ijmsa.20160505.18

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    AMA Style

    Liangliang Tang, Chang Xu, Zhuming Liu. The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors. Int J Mater Sci Appl. 2016;5(5):228-234. doi: 10.11648/j.ijmsa.20160505.18

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  • @article{10.11648/j.ijmsa.20160505.18,
      author = {Liangliang Tang and Chang Xu and Zhuming Liu},
      title = {The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors},
      journal = {International Journal of Materials Science and Applications},
      volume = {5},
      number = {5},
      pages = {228-234},
      doi = {10.11648/j.ijmsa.20160505.18},
      url = {https://doi.org/10.11648/j.ijmsa.20160505.18},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20160505.18},
      abstract = {Zn diffusion in III-V compound semiconductors are commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically under group III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except In As. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.},
     year = {2016}
    }
    

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  • TY  - JOUR
    T1  - The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors
    AU  - Liangliang Tang
    AU  - Chang Xu
    AU  - Zhuming Liu
    Y1  - 2016/10/13
    PY  - 2016
    N1  - https://doi.org/10.11648/j.ijmsa.20160505.18
    DO  - 10.11648/j.ijmsa.20160505.18
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 228
    EP  - 234
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20160505.18
    AB  - Zn diffusion in III-V compound semiconductors are commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically under group III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except In As. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.
    VL  - 5
    IS  - 5
    ER  - 

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Author Information
  • College of Energy and Electricity, Hohai University, Nanjing, China

  • College of Energy and Electricity, Hohai University, Nanjing, China

  • Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China

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