Study of the Effect of Interface Defect Layers (IDL1 and IDL2) on CsGeI3 Perovskite Solar Cells by SCAPS 1D Simulation

Alioune Sow; Saliou Seck; Modou Faye; Mamadou Salif Mane; Amadou Ndiaye; Bachirou Ndiaye; Babacar Mbow; Cheikh Sene

doi:doi:10.11648/j.ijmsa.20251404.13

Research Article |

| Peer-Reviewed

Study of the Effect of Interface Defect Layers (IDL₁ and IDL₂) on CsGeI₃ Perovskite Solar Cells by SCAPS 1D Simulation

Alioune Sow^*

, Saliou Seck

, Modou Faye, Mamadou Salif Mane, Amadou Ndiaye, Bachirou Ndiaye, Babacar Mbow, Cheikh Sene

Published in International Journal of Materials Science and Applications (Volume 14, Issue 4)

Received: 3 July 2025 Accepted: 16 July 2025 Published: 31 July 2025

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Abstract

Germanium-based perovskite solar cells have garnered significant interest within the scientific community due to their non-toxicity and excellent stability. However, their low conversion efficiency is an obstacle to their application and design. We designed a device with a normal configuration structured as Glass / FTO / SnO₂ / IDL₁ / CsGeI₃ / IDL₂ / Cu₂O / Au to improve our germanium-based perovskite solar cell, designed The integration of interface defect layers IDL₁ and IDL₂ the reduction of recombination. The study revealed that these IDL₁ and IDL₂ layers play a crucial role in solar conversion performance. By adjusting the thickness, electron affinity and defect density of the IDL₁ and IDL₂ layers, the conversion efficiency of our device exceeds 19%. However, an increase in temperature in the environment can negatively affect the cell by decreasing its photovoltaic efficiency.

Published in	International Journal of Materials Science and Applications (Volume 14, Issue 4)
DOI	10.11648/j.ijmsa.20251404.13
Page(s)	134-143
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2025. Published by Science Publishing Group

Keywords

Perovskite, CsGeI₃, IDL₁, IDL₂, PCE Performance

1. Introduction

In a global context where societaleVolution and the increasing energy demands of populations lead to a growing consumption rate of around 2.4% in 2023, this results in a significant rise in global pollution due to carbon dioxide (

) emissions. According to estimates compiled by the global budget project, pollution will increase by 0.8% in 2024, or 37.4 billion metric tons, compared with 2023

[21]

. The increase in global pollution is the main cause of climate change.

In order to neutralize carbon in industrial production, clean and efficient renewable energies are gaining popularity. The development of clean and sustainable energy sources has attracted attention over this century

[1, 3, 20]

. Solar energy has received considerable attention as a clean and non-polluting energy source with significant potential. In recent years, scientists have shown increasing interest in perovskite solar cells due to their remarkable light absorption capacity and promising prospects

[4, 8, 12]

. Currently, lead-based perovskite solar cell technology is being developed for commercialization, aiming to replace silicon solar cells

[6, 19]

. However, despite the vast application prospects of these perovskite solar cells, the toxicity and water solubility of lead are causing growing concern. In the field of lead-free perovskite solar cells, those based on germanium, due to their low toxicity, represent a highly favorable option compared to lead-based ones

[2, 14, 17]

. Germanium-based perovskite offers the advantages of low toxicity to the environment and organisms, great stability, and a tunable bandgap

[15]

. Nevertheless, further research is needed to explore the extended application of germanium-based perovskite cells due to their low conversion performance compared to their lead-based counterparts.

In this work, we will use the SCAPS 1D software, a simulator, to contribute to improving the conversion yields of germanium-based perovskite solar cells, while also addressing potential issues in the design of the solar device. Thus, our study device will be under the normal n-i-p configuration structured as

. We have chosen

and

[1, 11, 18]

as electron transport material (

) and hole transport material (

), respectively. Considering recombination and interface quality, we added defect interface layers (

)

[3, 7]

on both sides of the perovskite layer. The objective is toeValuate the impact of defect interface layers on the performance of the designed device.

2. Parameters and Methodology

This work was conducted using the SCAPS 1D modeling software developed by the University of Ghent. This simulator primarily relies on solving three fundamental equations, which are Poisson's equation and the continuity equations

[1, 16]

(1)

(2)

(3)

Download: Download full-size image

Figure 1. Structure of the cell (a) and energy diagram (b).

N is the concentration of free electrons and p is the concentration of free holes;

n_{t}

and

p_{t}

: represent the distribution of trapped electrons and holes respectively;

N_{D}^{+}, N_{A}^{-}

: ionized donor and acceptor doping concentrations, respectively.

Solving these equations allows us to obtain the modeling parameters

[1]

. Before that, it is imperative to define the structuring of our device. The figure below illustrates the arrangement of the various structural layers of the cell and the energy band diagram. We added

and

between the ETL and the perovskite layer and between the perovskite layer and the HTL, to prevent interface recombination and make the bandgap structure more resistant.

The values used for each layer for the simulation are listed in Table 1. In the table below,

N_{C}

and

N_{V}

correspond to the effective densities of the conduction band and the valence band,

N_{A}

and

N_{D}

denote the density of acceptor and donor respectively,

µ_{p}

and

µ_{n}

represent the mobility of holes and electrons respectively,

χ

represents the electron affinity,

E_{g}

is the bandgap energy, and

ℇ_{r}

is the relative permittivity. It can be noted that parameters for the metal layers (

and

) have been provided as they are taken as work functions with energy values of -4.4eV for

[3, 10]

and -5.1eV for

[3, 7]

Table 1. Parameters of the layers used.

[3,

5, 10]

[1,

18]

[3,

5 , 22 ]

[5,

13]

[3,

5 , 22 ]

[1,

11, 18]

Eg (eV)

3.5

1.41

1.6

1.41

2.17

Χ (eV)

4.0

4.17

4.0

4.17

3.2

$ε_{r}$

9.0

8.2

7.1

$μ_{p} (c m^{2} . V^{-} . s^{- 1})$

1.6

$μ_{n} (c m^{2} . V^{-} . s^{- 1})$

1.6

2000

$N_{V} ({cm}^{- 3})$

1.8 $10^{19}$

2.6 $10^{21}$

1 $. 10^{18}$

1 $. 10^{19}$

1 $. 10^{18}$

$N_{C} ({cm}^{- 3})$

2.2 $10^{18}$

4.36 $10^{18}$

1 $. 10^{18}$

2.2 $10^{18}$

$N_{A} ({cm}^{- 3})$

1. $10^{12}$

2. $10^{18}$

1. $10^{12}$

1. $10^{18}$

$N_{D} ({cm}^{- 3})$

2. $10^{19}$

1. $10^{18}$

2. $10^{16}$

$N_{t} ({cm}^{- 3})$

1 ${. 10}^{15}$

1 ${. 10}^{18}$

1 ${. 10}^{15}$

1 ${. 10}^{18}$

1 ${. 10}^{15}$

Thickness (nm)

500

1000

3. Results and Discussion

Download: Download full-size image

Figure 2. Current density as a function of voltage (a), external quantum efficiency (b), and energy band diagram (c).

With the data specified in the above table, we simulated using SCAPS 1D, allowing us to plot graphs of current density, external quantum efficiency, and energy bands. Figure 2a represents the relationship between current density J and open circuit voltage

, showing a decrease in density as voltage increases. The modeling provided a voltage value (

) of 0.98 V, a current density of 24.30 mA/cm², a fill factor of 78.67%, and finally a conversion efficiency from 18.79%. Figure 2b illustrates the external quantum efficiency, consisting of three parts: between 300 and 400nm indicating a growth phase of yield, from 400 to 700nm representing the highest phase of quantum yield, above 80%, and beyond 700nm, we note a drastic drop in the external quantum yield of our device. Figure 2c represents the energy bands, where

E_{c}

illustrates the conduction band energy level,

F_{n}

the Fermi level of electrons,

F_{p}

that of holes, and

E_{v}

the valence band. This graph shows that the gap between the conduction band level and the valence band level results in an electric field of approximately 2.11 V/µm. The conversion efficiency of the cell model can be improved by reducing recombination between the different layers. Therefore, we examine the impact of varying the parameters of the

layers on the performance of the solar cells.

3.1. Contribution of the Variation of the Thickness of the Interface Defect Layer on the Performances

To reduce recombination in our work cell, we added defect interface layers (

) between the electron transport layer (ETL) and the absorbing layer and (

) between the hole transport layer (HTL) and the

layer. Given the significant impact of layer thickness on internal efficiency and carrier transport in perovskite-based solar cells, we felt it necessary to assess the contribution of varying layer

thicknesses on the efficiency of our cell. We fixed a thickness range for

varying between 0.001 to 0.01µm and for layer

between 0.001 to 0.004µm. The simulation with these values allowed us to plot the trends of the electrical parameters. Figure 3a shows that increasing the thickness of layer

results in a slight drop in voltage, whereas the drastic decrease in open circuit voltage is more noticeable with the increase in thickness of layer

, dropping from 5.95 to 4.03V. This leads to a drop in the open-circuit voltage, if we take the difference between the two values indicated above, and it remains within the range of the band gap of our cell absorber. Therefore, the thickness of layer

plays a major role in the open circuit voltage. Figure 3b represents current density as a function of

thickness variation. We see that increasing the thickness of layer

does not significantly influence the current density. Conversely, increasing the thickness of layer

leads to an increase in current density from 24.26mA/cm² for an

thickness of 0.001µm to 24.29mA/cm² for an

value of 0.004µm. Therefore, layer

has a dominant influence on current density. Figure 3c shows the increase in fill factor as a function of increasing

layer thickness. A sufficient proof that the variation of the fill factor depends on theeVolution of the thicknesses of the

layers. Figure 3d illustrates the conversion efficiency diagram of our device, where we can see that the

under goes a slight decrease in its value with the increase in thickness of

. Conversely, the drop in yield is accentuated with theeVolution of thickness of

, which decreases its value from 19.06 to 18.87%. In summary, we can expect to achieve a better conversion efficiency of our device with thicknesses for the defect interface layers (

and

) of 0.001µm.

Download: Download full-size image

Figure 3. Effect of varying the thickness of interface defect layers: (a)

, (b)

, (c)

, and (d)

3.2. Impact of Electron Affinity on the Interface Defect Layers and on Performance

The electron affinity energy, which signifies the energy associated with the attraction of electrons, helps understand an element's likelihood of acquiring electrons. A level of electron affinity can enhance the performance of a solar cell. To better observe these effects, we have shown in Figure 4 the impact of varying the electron affinity energy of the interface layers. The energies of layers

and

were varied between a range of 4.12 and 4.17eV. Figure 4a shows that the variation of electron affinity in layer

does not impact the open circuit voltage. However, increasing the electron affinity energy of layer

causes a rapideVolution of

. Therefore, the electron affinity level is more balanced in layer

, which explains its dominant impact compared to layer

. Figure 4b shows the current density according to the variation of electron affinity. We can see that the increase in electronic energy in layer

leads to a drop in

J_{sc}

from almost 24.10 mA/cm² to 24.00 mA/cm². However, for layer

, increasing its electron affinity results in an increase in current density. The effect is therefore more significant in layer

. In the simulation, the best cell current density value is obtained with the layer and the layer for electron energy values of 4.12eV and 4.17eV respectively.

Download: Download full-size image

Figure 4. Impact of varying electron affinity of interface defect layers: (a)

, (b)

, (c) FF, and (d)

Regarding the fill factor (Figure 4c), its value remains constant regardless of the increase in electron affinity in layer

. Conversely, the variation of the fill factor is more pronounced as a function of theeVolution of electron affinity in layer

. We have seen a drastic reduction in the fill factor value from 29% for an affinity of 4.12eV to less than 24% with an affinity of 4.17eV for layer

. Figure 4d shows that increasing electron affinity in layer

does not have major consequences, allowing the consistency of the conversion yield of our cell to be maintained. The increase in conversion performance is simply due to the addition of electron affinity in layer

. Therefore, increasing the electron affinity in layer

, which makes the system more stable and reduces electronic transitions. Consequently, a balanced electron affinity level in layer

, equivalent to 4.17eV, improves the cell efficiency to 18.50%.

3.3. Impact of Variation IDL Defect Density on Performance

In the field of semiconductor solar cells, effective management of defects plays a crucial role in influencing photovoltaic conversion efficiency. In addition to the thickness of the layer, the presence of defects on the layers also affects the cell's performance. To conduct a thorough analysis, we represented the effect of varying the defect density between

10^{15}

and

10^{18} {cm}^{- 3}

in the

layers on the electrical parameters in the figure below. Figure 5a shows that the variation of defect density in layer

does not have much impact on the open circuit voltage. However, increasing defects in layer

causes a drop in the open circuit voltage

. On the layer, for a defect rate of

10^{18} {cm}^{- 3}

, we can see that the is at its smallest value. In Figure 5b, the decrease in current density is most noticeable when the defect rate present in the layer is between

10^{15}

and

10^{17} {cm}^{- 3}

. Beyond this value, the presence of a fault

in the layer has no effect on the current density. Regarding layer

, increasing the defect density leads to a decrease in current density in this layer. The effect of defects is more pronounced in layer

than in layer

. In Figure 5c, the fill factor is not significantly influenced by the increase in defect density in layer

. Although there is a slight variation in the fill factor in graph 5.c, it is too small to be significant. We can see from this graph that the decrease in the cell's conversion efficiency is systematically linked to the existence of defects

in the layers. The conversion efficiency of the cell decreases from 19.01% for a defect rate of

10^{15} {cm}^{- 3}

to 18.47% when the defect rate present is

10^{18} {cm}^{- 3}

. Figure 5d shows the variation of the conversion efficiency of our cell as a function of the increase in defects in the interface layers. We can see that the decrease in conversion efficiency of the cell is systematically linked to the injection of defects in the

layers. The conversion efficiency thus drops from 19.01% for defects of

10^{15} {cm}^{- 3}

to 18.47% for defects of

10^{18} {cm}^{- 3}

. In summary, the analysis of Figure 5d reveals that the increase in defect density hampers the efficiency of carrier flow. It increases the probability of recombination of electron-hole pairs, especially in the layer

, and consequently reduces the performance of the device.

Download: Download full-size image

Figure 5. Impact of variation defect density of interface defect layers: (a)

, (b)

, (c)

, and (d)

3.4. Effect of Operating Temperature on Photovoltaic Performance

One of the factors that greatly influences the performance and stability of perovskite-based solar cells is temperature

[9]

. To study its effect on our device, we adjusted the temperature between 300°K and 600°K and observed its behavior on the J-V characteristics as well as on the electrical parameters. In Figure 6a, we find that the J-V characteristics of the cell weaken with the increase in temperature. This shows that the J-V characteristic is strongly influenced by temperature. The decrease in cell characteristics with the increase in temperature may be caused by the degradation of the perovskite cell crystal. In Figure 6b to 6e, we represented the electrical parameters extracted from the J-V characteristic curve. In Figure 6b, the increase in temperature causes a decrease in open circuit voltage, indicating that temperature affects the series resistances of the device. Figure 6c shows that the impact of temperature on current density is almost negligible, resulting in a constant value of

whatever the temperature used. Regarding the fill factor illustrated by Figure 6d, we note an increase in the fill factor between 300°K and 400°K, reaching its best value at 400°K, close to 80%. Beyond 400°K, the increase in temperature leads to a decrease in fill factor. In Figure 6e, we clearly observe that temperature has a negative effect on the efficiency of the solar cell's performance, which is explained by the fact that high temperatures lead to the destruction and volatility of certain components, as well as instability in the device.

Download: Download full-size image

Figure 6. Effect of temperature on J-V characteristics (a) and electrical parameters: (b)

, (c)

, (d)

, and (e)

4. Conclusion

In this work, we designed a solar device under the normal n-i-p configuration of Glass / FTO / SnO₂ / IDL₁ / CsGeI₃ / IDL₂ / Cu₂O / Au. Using SCAPS 1D software, weeValuated the impact of interface defect layers on our cell's performance. The study revealed that the thickness of the

interface layer has a significant impact on the conversion efficiency of the device, as it promotes better electron transfer. Conversely, the electron affinity affects the cell's conversion efficiency more when the

layer takes an energy value of 4.17eV. The injection of defects into or within the

layer reduces the performance of the device. Increasing the defect density hampers the efficiency of carrier flow. It increases the probability of recombination of electron-hole pairs, especially in the

layer. As the temperature increases, the study showed that the performance of the solar device decreases. This leads to an increase in internal defects and degradation, resulting in an increase in recombination in the cell.

Abbreviations

IDL	Defect Interface Layers
HTL	Hole Transport Layer
ETL	Electron Transport Layer

Author Contributions

Alioune Sow: Conceptualization, Formal Analysis, Methodology, Writing – original draft, Writing – review & editing

Saliou Seck: Methodology

Modou Faye: Supervision, Visualization

Mamadou Salif Mane: Supervision, Validation

Amadou Ndiaye: Investigation, Methodology

Conflicts of Interest

The authors declare no conflicts of interest.

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APA Style

Sow, A., Seck, S., Faye, M., Mane, M. S., Ndiaye, A., et al. (2025). Study of the Effect of Interface Defect Layers (IDL1 and IDL2) on CsGeI3 Perovskite Solar Cells by SCAPS 1D Simulation. International Journal of Materials Science and Applications, 14(4), 134-143. https://doi.org/10.11648/j.ijmsa.20251404.13

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Sow, A.; Seck, S.; Faye, M.; Mane, M. S.; Ndiaye, A., et al. Study of the Effect of Interface Defect Layers (IDL1 and IDL2) on CsGeI3 Perovskite Solar Cells by SCAPS 1D Simulation. Int. J. Mater. Sci. Appl. 2025, 14(4), 134-143. doi: 10.11648/j.ijmsa.20251404.13

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AMA Style

Sow A, Seck S, Faye M, Mane MS, Ndiaye A, et al. Study of the Effect of Interface Defect Layers (IDL1 and IDL2) on CsGeI3 Perovskite Solar Cells by SCAPS 1D Simulation. Int J Mater Sci Appl. 2025;14(4):134-143. doi: 10.11648/j.ijmsa.20251404.13

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@article{10.11648/j.ijmsa.20251404.13,
  author = {Alioune Sow and Saliou Seck and Modou Faye and Mamadou Salif Mane and Amadou Ndiaye and Bachirou Ndiaye and Babacar Mbow and Cheikh Sene},
  title = {Study of the Effect of Interface Defect Layers (IDL1 and IDL2) on CsGeI3 Perovskite Solar Cells by SCAPS 1D Simulation
},
  journal = {International Journal of Materials Science and Applications},
  volume = {14},
  number = {4},
  pages = {134-143},
  doi = {10.11648/j.ijmsa.20251404.13},
  url = {https://doi.org/10.11648/j.ijmsa.20251404.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20251404.13},
  abstract = {Germanium-based perovskite solar cells have garnered significant interest within the scientific community due to their non-toxicity and excellent stability. However, their low conversion efficiency is an obstacle to their application and design. We designed a device with a normal configuration structured as Glass / FTO / SnO2 / IDL1 / CsGeI3 / IDL2 / Cu2O / Au to improve our germanium-based perovskite solar cell, designed The integration of interface defect layers IDL1 and IDL2 the reduction of recombination. The study revealed that these IDL1 and IDL2 layers play a crucial role in solar conversion performance. By adjusting the thickness, electron affinity and defect density of the IDL1 and IDL2 layers, the conversion efficiency of our device exceeds 19%. However, an increase in temperature in the environment can negatively affect the cell by decreasing its photovoltaic efficiency.},
 year = {2025}
}

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TY  - JOUR
T1  - Study of the Effect of Interface Defect Layers (IDL1 and IDL2) on CsGeI3 Perovskite Solar Cells by SCAPS 1D Simulation

AU  - Alioune Sow
AU  - Saliou Seck
AU  - Modou Faye
AU  - Mamadou Salif Mane
AU  - Amadou Ndiaye
AU  - Bachirou Ndiaye
AU  - Babacar Mbow
AU  - Cheikh Sene
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DO  - 10.11648/j.ijmsa.20251404.13
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 134
EP  - 143
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20251404.13
AB  - Germanium-based perovskite solar cells have garnered significant interest within the scientific community due to their non-toxicity and excellent stability. However, their low conversion efficiency is an obstacle to their application and design. We designed a device with a normal configuration structured as Glass / FTO / SnO2 / IDL1 / CsGeI3 / IDL2 / Cu2O / Au to improve our germanium-based perovskite solar cell, designed The integration of interface defect layers IDL1 and IDL2 the reduction of recombination. The study revealed that these IDL1 and IDL2 layers play a crucial role in solar conversion performance. By adjusting the thickness, electron affinity and defect density of the IDL1 and IDL2 layers, the conversion efficiency of our device exceeds 19%. However, an increase in temperature in the environment can negatively affect the cell by decreasing its photovoltaic efficiency.
VL  - 14
IS  - 4
ER  -

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Author Information

Alioune Sow

Department Physics, Faculty of Sciences and Technology, Semiconductors and Solar Energy Laboratory, Cheikh Anta DIOP University, Dakar, Senegal

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http://orcid.org/0009-0001-7257-683X
Saliou Seck

Department Physics, Faculty of Sciences and Technology, Semiconductors and Solar Energy Laboratory, Cheikh Anta DIOP University, Dakar, Senegal

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http://orcid.org/0009-0004-9176-3325
Modou Faye

Department Physics, Faculty of Sciences and Technology, Semiconductors and Solar Energy Laboratory, Cheikh Anta DIOP University, Dakar, Senegal

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Mamadou Salif Mane

Department Physics, Faculty of Sciences and Technology, Semiconductors and Solar Energy Laboratory, Cheikh Anta DIOP University, Dakar, Senegal

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Amadou Ndiaye

Department Physics, Faculty of Sciences and Technology, Semiconductors and Solar Energy Laboratory, Cheikh Anta DIOP University, Dakar, Senegal

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Bachirou Ndiaye

Department Physics, Faculty of Sciences and Technology, Semiconductors and Solar Energy Laboratory, Cheikh Anta DIOP University, Dakar, Senegal
Babacar Mbow

Department Physics, Faculty of Sciences and Technology, Semiconductors and Solar Energy Laboratory, Cheikh Anta DIOP University, Dakar, Senegal
Cheikh Sene

Department Physics, Faculty of Sciences and Technology, Semiconductors and Solar Energy Laboratory, Cheikh Anta DIOP University, Dakar, Senegal

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Table 1

Table 1. Parameters of the layers used.

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APA Style

Sow, A., Seck, S., Faye, M., Mane, M. S., Ndiaye, A., et al. (2025). Study of the Effect of Interface Defect Layers (IDL1 and IDL2) on CsGeI3 Perovskite Solar Cells by SCAPS 1D Simulation. International Journal of Materials Science and Applications, 14(4), 134-143. https://doi.org/10.11648/j.ijmsa.20251404.13

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ACS Style

Sow, A.; Seck, S.; Faye, M.; Mane, M. S.; Ndiaye, A., et al. Study of the Effect of Interface Defect Layers (IDL1 and IDL2) on CsGeI3 Perovskite Solar Cells by SCAPS 1D Simulation. Int. J. Mater. Sci. Appl. 2025, 14(4), 134-143. doi: 10.11648/j.ijmsa.20251404.13

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AMA Style

Sow A, Seck S, Faye M, Mane MS, Ndiaye A, et al. Study of the Effect of Interface Defect Layers (IDL1 and IDL2) on CsGeI3 Perovskite Solar Cells by SCAPS 1D Simulation. Int J Mater Sci Appl. 2025;14(4):134-143. doi: 10.11648/j.ijmsa.20251404.13

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@article{10.11648/j.ijmsa.20251404.13,
  author = {Alioune Sow and Saliou Seck and Modou Faye and Mamadou Salif Mane and Amadou Ndiaye and Bachirou Ndiaye and Babacar Mbow and Cheikh Sene},
  title = {Study of the Effect of Interface Defect Layers (IDL1 and IDL2) on CsGeI3 Perovskite Solar Cells by SCAPS 1D Simulation
},
  journal = {International Journal of Materials Science and Applications},
  volume = {14},
  number = {4},
  pages = {134-143},
  doi = {10.11648/j.ijmsa.20251404.13},
  url = {https://doi.org/10.11648/j.ijmsa.20251404.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20251404.13},
  abstract = {Germanium-based perovskite solar cells have garnered significant interest within the scientific community due to their non-toxicity and excellent stability. However, their low conversion efficiency is an obstacle to their application and design. We designed a device with a normal configuration structured as Glass / FTO / SnO2 / IDL1 / CsGeI3 / IDL2 / Cu2O / Au to improve our germanium-based perovskite solar cell, designed The integration of interface defect layers IDL1 and IDL2 the reduction of recombination. The study revealed that these IDL1 and IDL2 layers play a crucial role in solar conversion performance. By adjusting the thickness, electron affinity and defect density of the IDL1 and IDL2 layers, the conversion efficiency of our device exceeds 19%. However, an increase in temperature in the environment can negatively affect the cell by decreasing its photovoltaic efficiency.},
 year = {2025}
}

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TY  - JOUR
T1  - Study of the Effect of Interface Defect Layers (IDL1 and IDL2) on CsGeI3 Perovskite Solar Cells by SCAPS 1D Simulation

AU  - Alioune Sow
AU  - Saliou Seck
AU  - Modou Faye
AU  - Mamadou Salif Mane
AU  - Amadou Ndiaye
AU  - Bachirou Ndiaye
AU  - Babacar Mbow
AU  - Cheikh Sene
Y1  - 2025/07/31
PY  - 2025
N1  - https://doi.org/10.11648/j.ijmsa.20251404.13
DO  - 10.11648/j.ijmsa.20251404.13
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 134
EP  - 143
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20251404.13
AB  - Germanium-based perovskite solar cells have garnered significant interest within the scientific community due to their non-toxicity and excellent stability. However, their low conversion efficiency is an obstacle to their application and design. We designed a device with a normal configuration structured as Glass / FTO / SnO2 / IDL1 / CsGeI3 / IDL2 / Cu2O / Au to improve our germanium-based perovskite solar cell, designed The integration of interface defect layers IDL1 and IDL2 the reduction of recombination. The study revealed that these IDL1 and IDL2 layers play a crucial role in solar conversion performance. By adjusting the thickness, electron affinity and defect density of the IDL1 and IDL2 layers, the conversion efficiency of our device exceeds 19%. However, an increase in temperature in the environment can negatively affect the cell by decreasing its photovoltaic efficiency.
VL  - 14
IS  - 4
ER  -

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